ABSTRACT
Historically, the word graphene is derived from the Greek word graphein, which means "to write"—one of the earliest uses of graphene. This chapter shows that example of a vertical RF-heated furnace consisting of a quartz tube, porous graphite insulation, and graphite crucible. It focuses on the differences of growth mechanism, structural properties, and electrical properties on 4H-, 6H-, and 3C-silicon carbide (SiC) polar faces. The chapter also focuses on the characteristics of the growth of graphene in Ar ambient on these two polar faces. Graphene on SiC can be grown by thermal decomposition in conditions close to thermodynamic equilibrium. The chapter also shows that the structure in the valence band density of states near the Fermi level is described by the quantum well states whose number and energy position coin. The most commonly used SiC polytype structures for growing epitaxial graphene are 4H-SiC and 6H-SiC. Both of these SiC polytypes have either an Sior a C-terminated surface.
