ABSTRACT
Ever since the first integrated circuit (IC) and the complementary MOS technology were demonstrated in 1958 and 1963, respectively, the aggressive downscaling has continued that has actually fuelled the rapid growth of micro/nanoelectronics industries. In April 1965, Gordon Moore predicted that the number of transistors in an IC would double and the manufacturing cost would be reduced by half in every one and half years. Reducing the device dimensions not only results in a higher packing density but also leads to faster switching speed, lower power consumption, and lower manufacturing cost. An MOS transistor is said to be a short-channel device when the effective channel length is comparable to the sum of the source/drain junction depletion-layer widths. To improve the short-channel characteristics in classical devices, several methods such as super-steep retrograde profile, source/drain extension region, and halo implants were suggested. A device is said to be operating in volume inversion, if there is a strong coupling between two conducting channels.
