ABSTRACT
In the past few decades, the semiconductor industry has grown consistently to meet the performance and computing requirements of various sectors ranging from medical applications to high-performance microprocessors. In recent years, the evolution of conventional silicon MOS-based integrated circuits (ICs) has made it possible to integrate greater functionality and complexity on a single chip. Traditionally, bulk Metal Oxide Semiconductor Field-Effect Transistor (MOSFETs) are used in digital ICs, and their scaling has been studied in detail. As the FinFET dimensions shrink, the short-channel effects (SCEs) and leakage currents continue to dominate, which degrades the device performance. From device perspective, FinFETs can be further categorized as symmetric and asymmetric architectures. In tri-gate FETs, the thickness of the dielectric on top of the fin is similar to that of the side-gate oxide thickness to activate the third gate. Tri-gate FinFETs enjoy slightly higher width advantage over the double-gate FinFETs.
