chapter  10
Compound Semiconductor Oscillation Device Fabricated by Stoichiometry Controlled-Epitaxial Growth and Its Application to Terahertz and Infrared Imaging and Spectroscopy
WithTakeo Ohno, Arata Yasuda, Tadao Tanabe, Yutaka Oyama
Pages 17

In the field of compound semiconductors, evaluation of the deviation from stoichiometry and its control are important because it seriously affects the electrical and optical characteristics [1]. In the case of gallium arsenide (GaAs), controlled vapor pressure of group V elements (e.g., arsenic in GaAs) has shown significant effects on the properties of a wide variety of compound semiconductor materials, while liquid phase epitaxy (LPE) have been performed on various III–V compounds [2–4]. The stoichiometry control is also quite important to impurity doping characteristics in the research field of vapor phase epitaxy (VPE). Indeed, it is reported that surface stoichiometry seriously affects the surface reaction of some organic metal compounds in GaAs growth [5–7].