ABSTRACT
This chapter discusses the significance of single and multilayer higher K dielectric films for band-engineered nonvolatile memorie (NVM) device stack designs to achieve enhanced device attributes. It addresses band-engineering options into two separate subgroups: First for the thicker multilayer tunnel dielectric films and thereafter, the second subgroup dealing with thinner multilayer tunnel dielectric films. The chapter reviews earlier work on band engineering with conventional dielectric films. It applies such concepts to all the subgroups of NVM devices discussed in, namely: the FG/FP type, the SONOS discrete trap type, the NC embedded trap type, and the direct tunnel (DT) memory type to illustrate the significance of band engineering. The chapter explores the DT class of NVM designs, which has the best potential of achieving infinite endurance and at the same time may optimize the appropriate trade-offs in speed, memory, window, and retention to overcome existing limitations of NVM devices through applications of band engineering in DT devices.
