ABSTRACT
Along with the developing national aerospace industry and growing strategic consideration, the radiation resistance of semiconductor devices has been widely concerned Single event effect is the key factor which can affect the aerospace components’ reliability, which raises wide attention. The semiconductor devices of the current mainstream technology are micro-nano scale, and sensitivity to single event effect is also increased. In this paper, a model is established to analyze the characteristics of the device, and single event effect of SRAM components is studied by simulation.
