ABSTRACT
Chemical vapor deposition reactors provide a controlled environment for the reactants activation, proper distribution, and delivery; in addition, the environment on and around the substrates. Chemical vapor deposition Al integrated W/physical vapor deposition Al reflow for dynamic random access memory application also at the start of implementing into production. Chemical vapor deposition process parameters have to be fine adjusted to meet all the film properties requirements, in addition, the production requirements. Chemical vapor deposition tungsten does have good adhesion on silicon oxides, titanium nitride as adhesion layer was introduced to hold the tungsten plugs inside the silicon oxide matrix. Chemical vapor deposition systems evolution originated from the laboratory experimental reactors and their gas delivery methods aiming to deposit thin films with desirable properties. Chemical vapor deposition Cu provides a potentially more capable seed layer for electroplating Cu and further potential one step filling capability, especially at high aspect ratio via holes.
