ABSTRACT
Atomic layer deposition is by definition digital, adding discrete increments of thickness as the film growth proceeds. Atomic layer deposition made its first appearance as a potential solution in the semiconductor industry's International Technology Roadmap for Semiconductors Roadmap in the last several years. Atomic layer deposition may be assessed on a case-by-case basis to determine the technology of choice for the advanced materials needed in these future technologies. The chapter discusses the Atomic Layer Deposition (ALD) has content on: ALD Origins, Chemical Processes, ALD System Technology, Applications, and Summary of Current Status and Outlook. A thermal ALD reaction of note using metal halides is the HfCl4 chemistry: HfO2 has recently emerged as a promising high-K dielectric because of its chemical stability with silicon relative to ZrO2. Atomic layer deposition has demonstrated a core capability to provide uniform film properties for advanced gate application. Atomic layer deposition is in principle well suited to provide improvements in these areas.
