ABSTRACT
This chapter discusses the fundamental aspects of silicon technology and also discusses the advances in understanding of the science and engineering of this technology with respect to the challenges in the material requirements for ultra large scale integration fabrication. The nature of the microinhomogeneity of impurity in Czochralski crystals will be discussed, following the discussion of melt convection flows and effective segregation coefficient. In the case of p crystal growth, the enhanced oxygen incorporation is speculated due to enhanced crucible dissolution by heavily boron-doped silicon melt. The major findings and the relevance to crystal growth are discussed in the following. Semiconductor silicon materials have been the backbone for integrated circuit (IC) fabrication since its infancy. As IC technology evolved through several generations, the silicon materials have also gone through many changes in order to meet the challenges of design rule reduction, demands for improvement in device performance. Today's silicon materials are results of decades' continued effort in research and development.
