ABSTRACT

This chapter provides a richly referenced overview of the following important features needed for the reader to gain an understanding of its application and control: an overview of the body of ion implantation applications knowledge associated with the manufacture of state-of-art silicon complimentary metal oxide semiconductor devices, equipment architectural elements common to most commercial ion implantation systems, and the purpose. Ion implantation is a process whereby energetic ions impinge on a target, penetrating below the target surface and giving rise to a controlled, predictable, and ion distribution. A quantitative understanding of the atomic interactions between these energetic ions and the target atoms and masking layers is required for the prediction of the depth and lateral doping profiles produced by the ion implantation process. Ion implantation is an inherently violent process. The energy that the incoming ion sheds, while it slows down is transferred to the electrons and nuclei of the target.