ABSTRACT
This chapter presents the dynamic compact metal-oxide-semiconductor field-effect transistor (MOSFET) models for analyzing the device performance under time-varying terminal voltages in circuit operation. The dynamic operations of MOSFET devices are due to the capacitive effects of the device, resulting from the stored charges in the device. Thus, a capacitance model describing the intrinsic and extrinsic components of the device capacitance is an essential part of a compact model for circuit simulation besides direct current model. The charge-based capacitance modeling is one of the approaches to solve charge nonconservation problem in MOSFET capacitance modeling. In this approach, the charges in the drain, gate, source, and bulk of a MOSFET are determined to use them as state variables in circuit simulation. In the weak inversion region of a MOSFET device, though the number of mobile charges at the interface is small, these charges are important for modeling the switching behavior of the device.
