ABSTRACT
This chapter discusses the simulation of single-dielectric as well as multi-dielectric arrangements using charge simulation method (CSM) for both symmetric and asymmetric systems. It also discusses the modelling of three-core belted cable by conventional charge simulation method. Conventional CSM is based on the usage of discrete charges. The successful application of the CSM requires a proper choice of the types of fictitious charges. For capacitive-resistive field calculation including volume resistance, the principle of the method is that the field effect of the true charges produced by volume resistance is incorporated by means of complex fictitious charges in the CSM. In optimized CSM, both magnitudes and locations of charges are determined by minimizing certain objective functions. In the finite element method (FEM)–CSM hybrid method, the entire space is divided into regions, which are to be analyzed separately by the CSM and by the FEM.
