ABSTRACT
Manipulation of magnetically ordered states by electrical means is among the most promising approaches toward developing novel spintronic devices. Incorporating a voltage-controlled nonvolatile magnetic state variable into a scalable memory device with potentially additional logical function is the Holy Grail of spintronics. The reasons are simple enough: voltage control of a nonvolatile magnetic state virtually eliminates the need for large current densities, the accompanying power consumption, and detrimental Joule heating on writing and potentially also on reading [Binek 05, Dery 07, Ney 03, Nikonov 13, Zhirnov 05]. Current densities in excess of 1 MA/m2 are required for writing of the magnetic state in spintransfer-torque (STT) memory elements currently under development [Jonietz 10].
11.1 Introduction .................................................................................................. 255 11.2Background in Magnetoelectrics .................................................................. 257 11.3 Magnetoelectric Magnetic Tunnel Junction (ME-MTJ) ...............................260 11.4Magnetoelectric Spin Transistor ................................................................... 261
