ABSTRACT
The size of metal-oxide-semiconductor field-effect transistors (MOSFETs) has been continually decreased for the higher performance of large-scale integrations (LSIs). The device scaling results in smaller delay time and higher device density in a chip without the increase in power consumption. In order to suppress off state leakage current in nanoscale devices, silicon-on-insulator (SOI) and/or three-dimensional (3D) device structures have been intensively investigated. Because of their excellent short channel effect immunity, a 3D structure MOSFET is applied for the mass production at the 22 nm technology node1: fintype field-effect transistors (FinFETs).
