chapter  2
24 Pages

Device Elements and Circuits for Image Sensors

This chapter describes the components of device elements commonly used in image sensors, silicon as a material for sensor parts, and circuit components. The term components of device elements means the parts that form active semiconductor devices and are also components of large-scale integration circuits (LSI). The material of most real semiconductor LSI circuits is silicon. In silicon devices, electrons that are excited from the valence band to the conductive band are infrequently used. A source follower amplifier is a so-called buffer circuit, which accepts the input signal potential at the gate input part with high input impedance of metal-oxide semiconductor field-effect transistor and produces the same potential of output with low output impedance. The charged-couple device circuit can obtain a true signal component by removing the correlated noise involved in both levels with the clamp operation of the reset level and the sampling operation of the signal level.