ABSTRACT
This chapter focuses on stateful logic architectures, which realize intrinsic nonvolatile logic-in-memory by using nonvolatile memory elements simultaneously as latches and logic gates. It presents stateful memristive implication logic gates. The chapter shows that due to the error accumulation and low endurance of the memristive gates, second generation magnetic tunnel junctions (STTMTJ) devices are preferable to build up stateful logic circuits, as they do not show error accumulation and exhibit almost unlimited endurance. It examines STTMTJ-based reprogrammable gates and implication gates. Due to the easy integration of MTJs on top of a complementary metal–oxide–semiconductor circuit, the MTJ-based logic gates can be generalized to large-scale nonvolatile circuits. The chapter also shows how the functionality of STT-magnetoresistive random-access memory cells can be extended by including stateful logic operations. In contrast to the computation scheme, the Von Neumann architecture consists of physically separated memory and logic units.
