ABSTRACT
This chapter focuses on the three mass transport processes in Silicon–Germanium (Si–Ge) epitaxial structures, namely Si–Ge interdiffusion, dopant diffusion and dopant segregation. Si–Ge interdiffusion increases exponentially with Ge concentration and compressive strain and also increases with certain dopants and implant damage. The design and optimization of Si–Ge structures and thermal budgets in devices, it is very important to understand Si–Ge interdiffusion under compressive strain in the high Ge fraction range. In 1998, J. M. Baribeau studied Si–Ge interdiffusion with x-ray reflectivity and x-ray diffraction and ascribed the diffusion enhancement to grown-in nonequilibrium point defects instead of strain. Strain can influence many aspects of mass transport behavior, such as dopant diffusion, self-diffusion, interdiffusion, and dopant segregation in Si–Ge materials. Dopant diffusion in germanium has the high hole mobility in Ge and the potential in building Metal Oxide Semiconductor Field Effect Transistor in Ge to extend Moore's law.
