ABSTRACT
Increasing the indium arsenide body thickness brings about both a decrease in contact resistance and mobility, contributing to higher on-currents for the larger body thickness field-effect transistors. Quantitative agreement between the experiment and the mobility model is established by combining surface polar phonon scattering, surface roughness scattering, and impurity charge scattering. The origin of the subbands is believed to play an important role in determining the field dependence of the mobility. The two origins of subbands here are structural confinement due to the physical structure of the channel and electrostatic confinement due to strong conduction band bending in the axis orthogonal to the plane of the channel. While Schottky barriers and interlayers can be manipulated by changing the metals or manipulating the process conditions, the quantum contact resistance is more fundamental, related to the effective mass/density of states of the materials.
