ABSTRACT
A novel approach was developed in the fabrication of high-resistive tunnel junctions for room-temperature-operating single-electron transistors (SETs) using the chemical oxidation of tungsten nanoislands in peracetic acid. SET devices are of immense interest because of their potential for lowpower operation and high integration density. The basic building blocks of a SET device are tunnel junctions with very small capacitance that are connected in series with a central conducting island. The fabricated multijunction SET devices show a room-temperature Coulomb blockade. The key to the realization of room-temperature-operating SET devices is the fabrication of sub-10 nm nanoparticles in tungsten using partial focused ion beam (FIB) deposition and the chemical oxidation of tungsten in peracetic acid to realize high-resistive tunnel junctions. FIB technologies have been very useful in the realization of nanostructures for nanoelectron devices. The gate terminal is made of tungsten using the FIB deposition process. The chapter looks at metallic systems where tungsten and tungsten oxide are used.
