ABSTRACT
This chapter discusses the reading and writing accessibility of passive crossbar arrays, using both an analytical approach and a statistical simulation method, to discuss the effects of key device and array parameters on crossbar array operations. It provides a detailed analysis on the reading operation of crossbar arrays based on circuit simplification and analytical solutions. The chapter shows that the voltage configurations and sensing method determine the accessibility of crossbar arrays. It addresses a matrix-based solution applicable to general resistance distributions in crossbar arrays. Statistical analysis can be developed based on the large number of random resistance patterns. The chapter discusses the feasibility of improving the accessibility of crossbar arrays using nonlinear memory device characteristics. Crossbar memory arrays provide promising opportunities for nanoelectronics. Crossbar memory arrays have a broad range of applications in nanoelectronics. Many nanoarchitectures are based on the crossbar arrays where active devices are built at the junctions between access lines laid out in orthogonal arrangement.
