ABSTRACT
This chapter presents the results of investigations of the influence of the negatively charged trap/impurity on the magnitude of the current for the case when, in addition to the short-range Coulomb interactions, the self-heating effects are incorporated in the theoretical model. It utilizes a three-dimension Monte Carlo device simulator in which the short-range portion of the Coulomb interaction was accounted for by a real-space molecular dynamics model. The model accounts for both the short-range and the long-range components of the Coulomb interaction applied in many other studies. The chapter shows that the interplay of self-heating and Coulomb effects is very complicated in nanowire transistors and both have to be accounted for to get proper estimates of the ON current. Random telegraph noise fluctuations (RTF) manifest themselves as fluctuations in the transistor threshold voltage and drive current. RTF is caused by random trapping and detrapping of charges lying at the inversion channel of the device close to the oxide–semiconductor interface.
