ABSTRACT
The primary focus of the review is on direct graphene growth on dielectric substrates, specifically h-BN(0001), and certain oxides-MgO(111), mica, and Co3O4(111). A section of this review is devoted to exploring potential device applications-including electronic applications made possible by the controlled growth of graphene on MgO, which results in a band gap, or spintronics applications for graphene grown on magnetically polarizable oxides. Preliminary calculations suggest the possibility that such a system may exhibit nonlocal magnetoresistance values orders of magnitude higher than spin valves or spin Direct Graphene Growth on Dielectric Substrates FETs that are based on the injection and diffusion of individual spins through a graphene sheet. What is clear is that practical development of graphene-based devices must consider not only the issues of direct graphene growth, but how interfacial chemistry modifies graphene electronic and magnetic properties.
