ABSTRACT
The objective of this chapter is to fabricate a 5 μm 2D n-MOSFET (n-type metal-oxide-semiconductor “eld-effect transistor) using process simulator TSUPREM-4 [1] and device simulator Medici [2]. SUPREM is the acronym of Stanford University Process Engineering Modeling. Taurus TSUPREM-4 is for the version IV, which is a 2D simulation program. TSUPREM-4 is a computer program for the simulation of the fabrication steps required for the manufacture of silicon integrated circuits and for other integrated circuits (ICs). TSUPREM-4 simulates the changes in semiconductor structure which take place after various processing steps used during the actual fabrication procedure.
