ABSTRACT

This chapter focuses on the advanced semiconductor IR detector based on photoconductive and photovoltaic effects, such as photodiode, QW IR photodetectors (QWIPs) and QD IR photodetectors (QDIPs). Moore's law has been used as the benchmark for chip scaling in the microprocessing industry. However, in order to maintain the trend of advances in high-speed electronics, the integration of optical components with the mature silicon-based technology must be addressed. Molecular Beam Epitaxy (MBE) was developed in the early 1970s as a means of growing high-purity epitaxial layers of compound semiconductors. MBE can produce high-quality layers with very abrupt interfaces and good control of the thickness, doping and composition. Because of the high degree of control possible with MBE, it has been proven to be a valuable tool in the development of sophisticated electronic and optoelectronic devices.