ABSTRACT
The thin-film transistor (TFT) technology with good electrical performance is one of the keys in realizing active matrix organic light emitting diode (AMOLED) panels. This chapter describes oxide TFT AMOLED technology, including oxide semiconductor materials used in TFTs, TFT structures, pixel circuit designs, and TFT fabrication processes. Oxide TFTs are three-terminal field-effect devices, whose working principle relies on the modulation of the current flowing in a semiconductor placed between two electrodes (source and drain). The long-term stability and reliability of TFTs are two of the most important concerns for their applications in AMOLED displays. Therefore, a highly stable device should be verified under variable conditions, such as gate bias stress with and without light illumination and temperature stress. The chapter also discusses the basic principle of compensation pixel circuit for AMOLED display.
