ABSTRACT
Extreme environment technology development at Honeywell is really the story of the development and practical application of the unique properties of silicon-on-insulator (SOI) substrates for high-performance complementary metal-oxide-semiconductor (CMOS) circuit fabrication. A 1983 Defense Nuclear Agency funded effort focused on radiation hardness to total ionizing dose (TID) and transient radiation effects in the space environment. TID radiation is particularly disruptive to the oxides required in CMOS circuit fabrication producing trapped charge leading to high standby currents, and ultimately, circuit failure. Every radiation-hardened technology must be characterized and monitored during production to ensure that it will not fail during its intended expected 15 year life in the extreme environment of space. Supporting both junction and oxide isolation requires addressing the TID components found in both bulk and Mesa SOI technologies.
