ABSTRACT
This chapter attempts to address both aspects mentioned by describing the important features, applications, and limitations of technology computer-aided design (TCAD) tools, specifically, at the device physics level and mixed mode, for modeling extreme environment electronics. A TCAD device simulator typically provides a range of boundary conditions to model various semiconductor devices and complex geometries. Over the last several decades, a wide range of electron and hole mobility models for silicon and other materials have been published. These mobility models span a range of dependencies including doping densities, temperature, carrier–carrier scattering, oxide interface scattering, and lateral and transverse electric fields. The chapter presents published results showing the importance of an efficient and robust mixed-mode simulation capability to analyze radiation effects in modern IC technologies. These results were derived using the MixCad mixed-mode simulator.
