ABSTRACT
The history of MOSFET modeling for extreme environments is interwoven in the development of SPICE itself. SPICE, as its name implies, was designed as a Simulation Program with Integrated Circuit Emphasis, with transistors being the primary active device employed on such ICs. Depending upon the phenomena to be modeled, either model characterization, model augmentation, or a combination of both may be applied. CMOS devices are commonly fabricated in both bulk and SOI forms in minimum features sizes varying from 0.5 µm or greater all the way down to 32 nm and below in traditional silicon and compound technologies and hybrids. As the most widely used structure in integrated circuits design, the modeling, characterization, and simulation of the MOSFET have grown into a field all its own. Modeling of MOSFET devices in CMOS technologies, whether they be traditional bulk processes or be SOI technologies, requires working with complex models consisting of decades of research into device physics and efficient modeling techniques.
