ABSTRACT
The basis of any memory technology is the storage cell itself. The cell typically represents the vast percentage of silicon area in memory chips as well as in embedded memory macros, and the supporting peripheral circuitry is constructed to match the dimensions and shape of the cell array. Static random access memory (SRAM) is a staple in the embedded memory industry, providing relative simplicity with longterm reliability and fast access speed. The most commonly used separate memory component, dynamic random access memory, is prized for its higher density when compared to SRAM, while also providing reasonably high performance. The array of storage cells in a memory component must be supported by several key peripheral circuits. The effect of extending the temperature range beyond that of the already extended military temperature range is to exacerbate the effects already discussed. One of the most promising technologies for radiation-hardened nonvolatile memory based on the use of nontraditional technologies is the magnetoresistive RAM.
