ABSTRACT
Most of the methods in silicon nanowires (SiNWs) synthesis are categorized as the "bottom-up" approaches, among which the vapor—liquid—solid mechanism is the most commonly used method. Nanostructured silicon is the material consisting of highly textured structures with nanometer scales. Semiconductor NWs with band structure and a broad selection of composition are useful in semiconductor electronics. The morphology of SiNWs is strongly dependent on the method and mechanism being used for their growth. Various optical techniques have indicated that the properties of NWs are different from those of their bulk counterparts. Some researchers have measured the electrical properties of SiNWs. SiNWs have been grown in a selected region of a substrate using numerous patterning techniques. The very high frequency plasma enhanced chemical vapor deposition growth conditions promoted the growth of crystalline Si layers on the surface of the nanoneedle sidewall without gold catalytic nanoparticles during the growth of the NWs.
