ABSTRACT
This chapter highlights the terminologies, the basic physics of metal oxide semiconductor (MOS) devices, the trends, and the limitations of Complementary metal-oxide-semiconductor (CMOS) technology. It focuses on the issues related to the short-channel MOS transistors. The chapter explores the advantages and uniqueness of CMOS technology for digital applications, and introduces the physics of a MOS transistor operated in the deca- nanometer range. Digital CMOS technology will still be the solid base and the main framework for future electronics as well as other technology advancements. CMOS technology has been the most important driving force for the evolution of almost all kinds of technology. It has revolutionized the way we live and has expanded our productivities and capabilities. Carbon-nanotube field-effect transistor (FET) or graphene FET are other possible substitutions for CMOS technology.
