ABSTRACT
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During the past two decades, significant progress has been made in the microwave and millimeter-wave performance of high electron mobility transistors (HEMTs) based on GaAs and InP material technologies. However, with the increasing demand for higher-output power density and efficiency devices, there was a continuous drive to explore alternate semiconductor technology beyond Si, GaAs, and InP. For very high power applications, the channel layer material of the HEMT should have as high a bandgap as possible so that large voltages can be applied without the device breaking down. In recent years, two types of wide bandgap materials have received considerable attention for high power transistor applications: SiC and GaN. In this chapter, we focus mainly on GaN-based HEMTs that have emerged as an excellent technology for high power applications.
