ABSTRACT
GaN-based wide bandgap semiconductors present a powerful, although not fully explored, platform for emerging electronic devices capable of delivering high power operation at room temperature. Negative differential conductivity (NDC) in semiconductors is at the origin of various proposals for compact submillimeter and terahertz wave sources. The output power of a device depends on the current and voltage swings in the NDC region. High-power operation requires the use of materials capable of withstanding large current/voltage swings. Therefore, wide bandgap semiconductors, for example, GaN, are the material of choice for the active region of superlattice (SL) sources designed for high power operation. In addition, the performance of GaN-based electronic and optoelectronic devices is less sensitive to high dislocation density compared with their GaAs-InAs counterparts.
