ABSTRACT
Hydrogen can strongly affect the radiation response, long-term aging, and reliability of microelectronic devices and integrated circuits (ICs) [1,2]. Hydrogenous species and moisture exist in the oxide and surrounding materials of devices and ICs, especially for nonhermetically sealed IC packages where water can diffuse into critical gate and eld oxides depending on device type, processing conditions, and/or storage conditions. Hydrogen can increase the oxide and interface-trap charge in the gate oxides of metal-oxide semiconductor (MOS) devices and ICs, especially in a radiation environment [1]. Moreover, hydrogenous species and radiation exposure can increase the low-frequency noise of MOS devices.
