ABSTRACT
A memristor is an emerging nanodevice that can record the historical profile of the current or the voltage applied to itself. Combined with its ultrasmall footprint, the unique electrical properties of memristors create great potential for applications in very large-scale integration system designs, such as next-generation high-performance data massive storage and neuromorphic computing systems. The memristive effect was achieved in a thin-film structure of titanium dioxide (TiO2) by moving the doping front along the device. After the TiO2 memristor was invented, many memristor materials/structures based on various physical mechanisms were found or rediscovered, including spintronic devices, polymeric thin film, MgO-based magnetic tunnel junctions, ion conductor chalcogenide and so on. The spintronic memristor consists of a long spin-valve strip that includes two ferromagnetic layers: a reference layer and a free layer. The magnetization direction of the reference layer is fixed by coupling to a pinned magnetic layer.
