ABSTRACT
The traditional approach to the small-signal analysis of transistor amplifiers employs the transistor models with dependent sources, illustrated in Figure 18.1, for both the metal-oxide-silicon (MOS) and bipolar junction transistor (BJT) devices [1,2,4]. Small signal equivalent models for: (a) MOS transistor and (b) BJT transistor. https://s3-euw1-ap-pe-df-pch-content-public-p.s3.eu-west-1.amazonaws.com/9781315218441/57775f29-ae72-4899-a474-bf25d0d8888d/content/fig18_1.tif" xmlns:xlink="https://www.w3.org/1999/xlink"/>
