ABSTRACT
The purpose of epitaxy is to create a thin high-quality layer or layers of different composition such as abrupt P-N junctions or heterojunction interfaces. This chapter provides a brief description for a few of the more important epitaxial growth techniques. The epitaxial technique adds more semiconductor material to the material originally present, commonly referred to as the substrate. One of the epitaxial techniques is described as liquid-phase epitaxy, which means the growth occurs from a liquid solution source located adjacent to the semiconductor material. Hydride Vapor-Phase Epitaxy technology has been a successful technique employed to produce epitaxial material for commercial applications for many years. There has been a renewed interest in this technology for producing Group III Nitride substrates and device structures for ultraviolet- and blue-light-emitting devices. Molecular beam epitaxy (MBE) is another technique for depositing well-structured layers on high-purity substrates. The principle of MBE is based on the evaporation of ultrapure elements of the structure to be grown.
