ABSTRACT
Precise measurement is a prerequisite to accurate device modeling and characterization. For accurate evaluation of high-frequency characteristics and models, S-parameter measurements are a widely used approach. The standard open de-embedding method was first proposed in 1987. It employs a technique in which the pad-substrate and wire-substrate capacitance are accounted for and calibrated by using an OPEN test structure. The layout of OPEN test structure is same as the layout of device-under-test except the transistor is removed. In millimeter-wave measurement, the parasitics becomes more distributive and the open-short method starts to lose accuracy. Some high-frequency de-embedding techniques, which use different lumped equivalent circuit to model the parasitics and different test structures for extraction, have been proposed. The frequency range of valid ac measurement is extended using the open-short methods, but the accuracy of the parasitics model depends on the process technology.
