ABSTRACT
Extensive work has been published on RF SiGe [1-15] and SiGe:C [16-18,22] npn transistors with
impressive cutoff frequencies in the range 40-350GHz. There are, however, very little data available on
SiGe and SiGe:C pnp transistors [19-21]. The design of complementary npn and pnp transistors of high
and comparable performance is important to linear analog circuits with symmetrical architectures. In
addition, there is a tradeoff between gain (b), transistor breakdown (BVCEO), early voltage (VA), cutoff
frequency (fT), and noise that must be met for every application. Finally, there are limitations to the
thermal budget that must be considered when integrating SiGe-bipolar, CMOS, and passive compon-
ents. These considerations were taken into account during the development of a novel, full dielectrically
isolated modular complementary-SiGe BiCMOS process that is now in manufacturing for ultrahigh-
speed precision analog circuits [23]. The availability of SiGe and a controlled emitter interface oxide
(IFO) provide added flexibility during the tradeoff. This chapter describes the integration of bipolar,
CMOS, and passive process modules; their interactions; and integration issues. Active and passive
components and their key parameters are then discussed. The chapter concludes with a summary of
results obtained on a typical voltage feedback operational amplifier.
