ABSTRACT
This chapter discusses crystal growth techniques for ZnSe and related luminescent materials will be described first, and then application for ZnSe-based laser diodes. Metal organic vapor phase epitaxy (MOVPE) growth of ZnSe involves the pyrolysis of a vapor-phase mixture of H2Se and, most commonly, dimethylzinc (DMZn) or diethylzinc (DEZn). Molecular beam epitaxy (MBE) is the growth of semiconductor films such as ZnSe by the impingement of directed atomic or molecular beams on a crystalline surface under ultra-high-vacuum (UHV) condition. Early ZnSe-based laser diodes show room-temperature and continuous wave (RTCW) lifetimes of the order of a minute because of degradation caused by extended crystalline defects such as stacking faults. Transmission electron microscopy (TEM) imaging indicates that the degradation originates from dislocation networks that developed in the quantum well region during lasing. ZnSe-based blue-green laser diodes have been studied intensively to be applied in next-generation, high-density optical disk memories and laser printers.
