ABSTRACT

The Metal–oxide semiconductor (MOS) transistor behavior has been demonstrated at the research level, down to a 6–nm gate length on fully depleted silicon on insulator (SOI). Compared to traditional complementary metal oxide semiconductor bulk technologies, SOI technologies are foreseen as alternative technologies that could lead to a better trade–off between active and leakage power. This chapter introduces two families of transistors: high–speed transistors and low–leakage transistors. The main parameters required for the next generations of bulk metal–oxide semiconductor field–effect transistor devices, in case of High performance, Low operating power, and Low standby power technology options. The main difference between bulk and SOI substrates is the buried oxide layer located below the active silicon layer. The high–K materials are proposed to reduce the gate leakage current, metal gate is used to suppress the polysilicon gate depletion, and SOI technologies with single or multiple gate transistors offer opportunities for further scaling down of the transistor dimensions.