ABSTRACT
I. Hydrogen Atomic Model and Molecular Bond . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
II. Behavior of Molecules Adsorbed on the Si Surface:
Taking a SiH4-Type Molecule as an Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
III. Electronegativity and Energy Level: Change in State
of Electrons on Surface due to Terminating Atoms . . . . . . . . . . . . . . . . . . . . . . . . . . 9
IV. Oxidation of Si Surface at Room Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
V. Selective W Film Deposition by Means of (SiH4þWF6) . . . . . . . . . . . . . . . . . . . . . 17 VI. Redox Potential and Energy Level of Liquid Solution — Native Oxide Formation
on the Si Surface and Metal Contaminant Adhesion and Removal with Solution . . 18
VII. New Era of Si Technology — (1 1 0) Si Surface . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
VIII. Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
The author describes molecular behavior in many aspects by means of the hydrogen atomic model,
as there is no general theoretical equation of molecular bond energy. The energy of an electron (1n) and the Bohr radius of the first orbit (aB) in this model are expressed, when the principal quantum
number of n is used, as
1n ¼ me 4
2(4p10) 2h2
n2 ¼ 13:6
n2 (eV) (1:1)
aB ¼ (4p10) 2h2
me2 ¼ 0:053 nm (1:2)
where m, e, 10 and h ¼ 2ph are, respectively, the mass of the electron, unit charge, the dielectric constant of vacuum, and Planck’s constant.
