ABSTRACT
Semiconductor heterostructures are the foundations for revolutionary advances in solid-state optical devices of the last few decades. The family of semiconductors that has had the largest impact is based on elements from groups III (Ga, In, Al) and V (In, As, Sb, N) in the periodic table. Of these so-called III-V semiconductors, the gallium arsenide (GaAs) aluminum gallium arsenide (AlxGa1-xAs) system is the favorite of optical physicists. GaAs can be grown very cleanly by molecular beam epitaxy, and has a direct bandgap near 300 THz (1.5 eV) at low temperatures. This photon energy is extremely convenient for state-of-the-art detectors and sources of near-infrared (NIR) radiation. Furthermore, because the lattice constants of GaAs and AlAs are nearly identical, AlxGa1-xAs can be grown epitaxially
6.2 Internal Dynamics of Excitons and Effects of Terahertz Radiation on Excitonic Photoluminescence ................................................................ 217 6.2.1 Introduction ...................................................................................... 217 6.2.2 Internal Dynamics of Magnetoexcitons Measured by Optically
Detected Terahertz Resonance Spectroscopy .................................. 218 6.2.2.1 Experimental Results ......................................................... 219
6.2.3 Nonresonant PL Quenching Mechanism .........................................227 6.2.3.1 Experiment .........................................................................227 6.2.3.2 Results ................................................................................227 6.2.3.3 Drude Analysis of Carrier Heating ....................................230 6.2.3.4 Discussion ..........................................................................230
