ABSTRACT
In particular, pulsed reactive magnetron deposition techniques have been investigated, more recently, since it is possible to conduct reactive sputtering without arcing during deposition. Pulsed reactive sputtering can also change and control the plasma constituents, increase the ion energy and ion fl ux, and control microstructural growth of the thin fi lm through ion bombardment [8]. The applications of pulsing in reactive magnetron sputtering opens up considerable opportunities for the control of ion energy and ion fl ux to optimize the deposition process and tailor the as-deposited coating structure and properties.
