ABSTRACT
Essentially ail theoretical treatments of electron and hole transport in semiconductors are based upon a one-electron transport equation, which usually is the Boltzmann transport equation. As with most transport equations, this equation determines the distribution function under the balanced application of the driving and dissipative forces. How do we arrive at a one-electron (or one-hole) transport equation when there are some 10"—1020 carriers per cubic centimeter in the device? Even in so doing, the distribution function is not the end product, as transport coefficients arrive from integrals over this distribution. What are these integrals, and how are they determined? We begin to study the answers to these, and other, questions in this chapter.
