ABSTRACT
In recent years, as device sizes have become smaller and carrier densities have become larger, the role of the electron-electron interaction has become very important in transport within semiconductor devices. It is not that this effect has automatically become dominant. In fact, the role of the electron-electron interaction was introduced in the treatment of the drifted Maxwellian approximation in Chapter 4 and the screening of the polar optical phonon was also discussed. However, for the time and space scales that exist in the sub-micron and ultra-submicron devices, it is no longer adequate simply to adopt a screening length (or time).
