ABSTRACT
This chapter discusses the transistor structures and design features relevant for nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). It also discusses four approaches of MOSFET scaling: constant field scaling, constant voltage scaling, generalized scaling, and generalized-selective scaling. The basic rules for successful MOSFET scaling are comprised in what is called the MOSFET scaling theory. MASTAR is a simulation tool based on drift-diffusion equations and allows the calculation of the electrical characteristics of conventional bulk MOSFETs and advanced MOSFET structures, such as Silicon-on-Insulator (SOI) and double-gate MOSFETs. A simple but indicative assessment of the quality of a MOSFET design can be made applying the so-called Good Technology Rules approach introduced by Skotnicki. The main features of Si bulk MOSFETs corresponding to a state-of-the-art complementary metal-oxide semiconductor technology. Depending on the thickness of the Si body, SOI MOSFETs can be categorized into partially depleted MOSFETs with a thick body, fully depleted MOSFETs having a thinner body, and ultra-thin-body MOSFETs.
