ABSTRACT
This chapter proposes a double-shielded interposer design with two metal layers directly contacting to the top and bottom surfaces of the silicon substrate for the high-speed signal propagating along through silicon via (TSV). It discusses two kinds of compact waveguide structures based on TGV technology. The air-filled TGVs are employed in the proposed waveguides. Simulation results show that these air-filled vias can concentrate electromagnetic field within the waveguides, and thus reduce the electromagnetic interference inside the glass interposer. For TSV-based three-dimensional (3D) integrated circuit to be used in high-speed applications, the lossy characteristic of the silicon has to be considered. Some previous works have been done to suppress substrate loss and the corresponding electromagnetic compatibility (EMC) issues. The chapter presents a double-shielded TSV interposer, where the metal layers together with the highly doped layers are placed on double sides of the silicon substrate.
