ABSTRACT
This chapter discusses the morphological, chemical and structural properties of such core–shell nanowires (NW). Prior to the growth of the SrTiO3 shell, the GaAs NWs were protected using an arsenic capping–decapping procedure in order to prevent the uncontrolled oxidation and the contamination of the NW surface during the transfer from the III–V to the oxide molecular beam epitaxy reactor. Despite the strong interest of hybrid core–shell NWs, only few studies reported the growth of such heterostructures. Most of the reported GaAs-based core/shell NWs are made of similar III–V semiconductor shell like AlGaAs and GaInP which are easily grown but cannot meet the need for multifunctional devices. The epitaxial integration of heterogeneous shell materials, especially functional oxides, on the GaAs NW core could lead to the fabrication of multifunctional devices by coupling III–V semiconductor properties with oxides properties, such as ferroelectricity and piezoelectricity.
