ABSTRACT

Some of the first observations of quantum interference were made using thin metal films and silicon inversion layers. Since then most of the quantum interferences and ballistic transports are observed in two-dimensional systems. The physics of quantum interference includes the Aharonov-Bohm effect, quantum interference transistors, universal conductance fluctuations, ballistic electron transport and Landauer-Buttiker formula, quantized conductance in point contacts, multi-terminal devices, quantum dot resonant tunneling devices. In these structures the electron movement is dominated by quantum mechanics, not classical mechanics. For a conduction-band electron in zinc-blende semiconductors the dominant spin-orbit interaction in low-dimensional semiconductor structures comes from some physical factors. The nature of the spin of carriers in semiconductors has received considerable attention. With the rapid progress in semiconductor fabrication techniques, it is possible to dope magnetic impurities inside semiconductors to produce diluted magnetic semiconductors.